MRF18030BLR3 mrf18030blsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for gsm and edge base station applications with frequencies from 1800 to 2000 mhz. suitable for fm, tdma, cdma and multicarrier amplifier applications. specified for gsm 1930 - 1990 mhz. ? typical gsm performance: power gain - 14 db (typ) @ 30 watts efficiency - 50% (typ) @ 30 watts ? capable of handling 5:1 vswr, @ 26 vdc, 30 watts cw output power features ? internally matched for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? low gold plating thickness on leads, 40 ? nominal. ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 32 mm,13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 83.3 0.48 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 2.1 c/w table 3. esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) document number: mrf18030b rev. 7, 5/2006 freescale semiconductor technical data MRF18030BLR3 mrf18030blsr3 1930 - 1990 mhz, 30 w, 26 v gsm/gsm edge lateral n - channel rf power mosfets case 465e - 04, style 1 ni - 400 MRF18030BLR3 case 465f - 04, style 1 ni - 400s mrf18030blsr3 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor MRF18030BLR3 mrf18030blsr3 table 4. electrical characteristics (t c = 25 c, 50 ohm system unless otherwise noted) characteristic symbol min typ max unit off characteristics drain- source breakdown voltage (v gs = 0 vdc, i d = 20 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 250 madc) v gs(q) 2 3.9 4.5 vdc drain- source on - voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.29 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 1 adc) g fs ? 2 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.3 ? pf functional tests (in freescale test fixture) (2) output power, 1 db compression point (v dd = 26 vdc, i dq = 250 ma, f = 1930 - 1990 mhz) p1db 27 30 ? w common- source amplifier power gain @ 30 w (v dd = 26 vdc, i dq = 250 ma, f = 1930 - 1990 mhz) g ps 13 14 ? db drain efficiency @ 30 w (v dd = 26 vdc, i dq = 250 ma, f = 1930 - 1990 mhz) 46.5 50 ? % input return loss @ 30 w (v dd = 26 vdc, i dq = 250 ma, f = 1930 - 1990 mhz) irl ? -12 -9 db 1. part internally matched both on input and output. 2. device specifications obtained on a production test fixture.
MRF18030BLR3 mrf18030blsr3 3 rf device data freescale semiconductor c1 1.8 pf, 100b chip capacitor c2 0.8 pf, 100b chip capacitor c3 0.8 pf, 100b chip capacitor c4, c5 1.2 pf, 100b chip capacitors c6, c7, c8 8.2 pf, 100b chip capacitors c9 220 f, 63 v electrolytic capacitor r1 1.0 k , 1/8 w chip resistor (0805) r2, r3 10 k , 1/8 w chip resistors (0805) z1 0.496 x 0.087 microstrip z2 1.022 x 0.087 microstrip z3 0.257 x 0.633 microstrip z4 0.189 x 0.394 microstrip z5 0.335 x 0.394 microstrip z6 0.616 x 0.087 microstrip z7 0.845 x 0.087 microstrip z8 0.366 x 0.087 microstrip z9 0.500 x 0.087 microstrip figure 1. 1930 - 1990 mhz test fixture schematic figure 2. 1930 - 1990 mhz test fixture component layout rf input rf output z1 v gg c2 c6 z3 dut v dd z4 z5 c1 z7 r2 c7 r1 c9 c8 + z2 r3 z9 z8 c3 c5 c4 z6 v bias ground ground v supply r2 mrf18030b (bias) (supply) r3 c7 r1 c2 c1 c8 c4 c5 c3 c6 c9 cutout area freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
4 rf device data freescale semiconductor MRF18030BLR3 mrf18030blsr3 typical characteristics figure 3. wideband gain and irl at 30 w and 15 w output power figure 4. output power versus frequency figure 5. power gain versus output power figure 6. power gain versus output power figure 7. power gain versus output power figure 8. power gain and efficiency versus output power input return loss (db) irl, 10 1850 ?30 irl @ 30 w g ps @ 15 w v dd = 26 vdc i dq = 250 ma t = 25 c f, frequency (mhz) g ps , power gain (db) g ps @ 30 w irl @ 15 w 11 ?25 12 ?20 13 ?15 14 ?10 15 ?5 16 0 1900 1950 2000 2050 f, frequency (mhz) 2020 0 40 1880 p in = 2 w v dd = 26 vdc i dq = 250 ma t = 25 c 1 w 0.5 w 0.25 w 5 10 15 20 25 30 35 1900 1920 1940 1960 1980 2000 p out , output power (watts) 100 16 0.1 p out , output power (watts) g ps , power gain (db) i dq = 400 ma 300 ma v dd = 26 vdc f = 1960 mhz t = 25 c 200 ma 100 ma 15 14 13 12 11 10 110 85 c 100 15 0.1 t = 25 c v dd = 26 vdc i dq = 250 ma f = 1960 mhz p out , output power (watts) g ps , power gain (db) 55 c 14 13 12 11 10 9 110 0 100 16 0.1 g ps v dd = 26 vdc i dq = 250 ma f = 1960 mhz t = 25 c p out , output power (watts) g ps , power gain (db) 15 14 13 12 11 10 50 40 30 20 10 60 110 , drain efficiency ( % ) 100 15 v dd = 22 v 24 v i dq = 250 ma f = 1960 mhz t = 25 c p out , output power (watts) g ps , power gain (db) 28 v 30 v30 v 14 13 12 11 10 110 26 v
MRF18030BLR3 mrf18030blsr3 5 rf device data freescale semiconductor figure 9. series equivalent source and load impedance f mhz z source z load 1710 1785 1805 2.92 - j8.24 4.15 - j10.38 3.84 - j9.75 4.18 - j9.06 4.59 - j9.46 4.98 - j9.06 v dd = 26 v, i dq = 250 ma, p out = 30 w (cw) f = 2110 mhz f = 1710 mhz 1840 1880 1960 4.04 - j10.22 6.20 - j12.29 6.12 - j12.29 6.10 - j7.63 5.83 - j6.89 5.55 - j6.33 1990 2110 15.19 - j11.85 8.61 - j12.10 5.93 - j6.66 3.82 - j5.33 f = 1710 mhz f = 2110 mhz z o = 25 z source z load z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network
6 rf device data freescale semiconductor MRF18030BLR3 mrf18030blsr3 notes
MRF18030BLR3 mrf18030blsr3 7 rf device data freescale semiconductor package dimensions case 465e - 04 issue f ni - 400 MRF18030BLR3 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m, 1994. 3. dimension h is measured 0.030 (0.762) away from package body. 4. information only: corner break (4x) to be .060 .005 (1.52 0.13) radius or .06 .005 (1.52 0.13) x 45 chamfer. style 1: pin 1. drain 2. gate 3. source seating plane 2x d n (lid) e r (lid) f 2x k a t c m b m bbb a m t h b b g a m a m ccc b m t m a m bbb b m t 1 2 3 2x q m (insulator) s (insulator) m a m ccc b m t m a m aaa b m t m a m aaa b m t dim a min max min max millimeters .795 .805 20.19 20.44 inches b .380 .390 9.65 9.9 c .125 .163 3.17 4.14 d .275 .285 6.98 7.24 e .035 .045 0.89 1.14 f .004 .006 0.10 0.15 g h .057 .067 1.45 1.7 k .092 .122 2.33 3.1 m .395 .405 10 10.3 n .395 .405 10 10.3 q .120 .130 3.05 3.3 r .395 .405 10 10.3 s .395 .405 10 10.3 aaa bbb ccc .600 bsc 15.24 bsc .005 bsc 0.127 bsc .010 bsc 0.254 bsc .015 bsc 0.381 bsc see note 4 case 465f - 04 issue e mrf18030blsr3 ni - 400s notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. dimension h is measured 0.030 (0.762) away from package body. style 1: pin 1. drain 2. gate 3. source 1 seating plane 2 e f 2x k m a m bbb b m t a t c h b a dim a min max min max millimeters .395 .405 10.03 10.29 inches b .395 .405 10.03 10.29 c .125 .163 3.18 4.14 d .275 .285 6.98 7.24 e .035 .045 0.89 1.14 f .004 .006 0.10 0.15 h .057 .067 1.45 1.70 k .092 .122 2.34 3.10 m .395 .405 10.03 10.29 s .395 .405 10.03 10.29 aaa .005 ref 0.127 ref 2x d m a m ccc b m t bbb .010 ref 0.254 ref ccc .015 ref 0.38 ref n .395 .405 10.03 10.29 r .395 .405 10.03 10.29 m a m ccc b m t m a m aaa b m t n (lid) m (insulator) (flange) 3 b (flange) r (lid) s (insulator) m a m aaa b m t
8 rf device data freescale semiconductor MRF18030BLR3 mrf18030blsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf18030b rev. 7, 5/2006
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